Comparative Study of SiGe MOSFET with Single Substrate MOSFET Using Visual TCAD

A comparative study of  SiGe  based MOS transistor with single Si and Ge based MOS transistors has been investigated. The objective of this study is to analyze the performance of SiGe MOSFET which  shows some significantly better electrical characteristics as compared to the silicon and Germanium channel MOSFET’s. Design, Simulation and analysis of transistors has been performed with the help of Visual TCAD.

Keywords: SiGe, NMOS, Visual TCAD, I-V characteristics.